RFmagnetronsputtering相关论文
Indium doped ZnO films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets......
Characterization of Copper Indium Gallium Selenide Thin Films Prepared by RF Magnetron Sputtering Us
Cu(InxGa1-x)Se2 (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices.CIGS has a ......
Influence of Oxygen Partial Pressure on Characteristics of Amorphous IGZO Thin-Film Transistors Fabr
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Preparation and Characterization of High Reflectivity Ag-SiO2 Thin Films Deposited by RF Magnetron S
Concentrating Solar Power (CSP) is one of the major technology for converting sunlight to electricity.1-4) With the deve......
Nitride-oxide based p-n heterojunctions synthesized by depositing VO2film on p-GaN/sapphire substrat
Gallium nitride (GaN) was considered to be the most important semiconductor material since silicon,due to its wide band ......
p-type ZnO thin films were prepared by thermal oxidation of rf magnetron sputtered Zn3N2∶Al films on glass substrates.T......
ZnO is an Ⅱ-Ⅵ semiconductor with various interesting electrical,optical,acoustic and chemical properties due to its wi......
Pure and N2 doped ZnO thin films of thickness ranging~300 – 500 nm with 5,10,15,20,25,and 50 sccm inflow ratios of N2 a......
The influence of the Si02 gate insulator thickness to the performance and Bias-voltage stress stabil
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用射频磁控溅射法在Pt/Ti/SiO2/Si(100)基片上沉积了LiTaO3薄膜, 并在氧气气氛中不同温度下进行退火。采用SEM、XRD、XPS等表征方......
采用射频磁控溅射法，在K9 抛光玻璃基底上沉积氧化钒（VOx）薄膜，研究在其他参数保持不变时氧分压参量对薄膜的结构、表面质量及透光性能......
在不同氨分压比(0~30%)下，用射频磁控溅射法在玻璃和硅衬底上制备了N掺杂β-Ga2O3薄膜.研究了氨分压比和退火对薄膜光学和结构特性......
H, Ga-codoped ZnO (HGZO) thin films were prepared by RF magnetron sputtering in Ar+H2ambient at room temperature.The......
The surface morphologies of (Pb, Sr) TiO3 thin film fabricated on Si-buffered Pt/Ti/SiO2/Si substrat
(Pb, Sr)TiO3 (PST) thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with diff......
